Description
General part information
BSC082N10LSGATMA1
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).
Technical Specifications
Parameters and characteristics for this part
| Specification | BSC082N10LSGATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 13.8 A |
| Current - Continuous Drain (Id) (Tc) | 100 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 104 nC, 104 nC |
| Input Capacitance (Ciss) (Max) | 7400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-1 |
| Power Dissipation (Max) | 156 W |
| Rds On (Max) | 8.2 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.4 V |
Pricing
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