Description
General part information
SI2323DS-EV
MOSFET P-CH 20V 3.7A SOT23-3
Technical Specifications
Parameters and characteristics for this part
| Specification | SI2323DS-EV |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 4.2 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 9.4 nC |
| Input Capacitance (Ciss) (Max) | 954 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23 |
| Power Dissipation (Max) | 1.4 W |
| Rds On (Max) | 50 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) | 1.3 V |
Pricing
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CAD
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Documents
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