Specification	IRFD9210PBF

Current - Continuous Drain (Id) (Ta)	400 mA
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	8.9 nC
Input Capacitance (Ciss) (Max)	170 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.3 in
Package Name	4-HVMDIP, 4-DIP
Package Width	7.62 mm
Power Dissipation (Max)	1 W
Rds On (Max)	3 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

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