Description
General part information
BSZ031NE2LS5ATMA1
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSZ031NE2LS5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 19 A |
| Current - Continuous Drain (Id) (Tc) | 40 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 18.3 nC |
| Input Capacitance (Ciss) (Max) | 1230 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TSDSON-8-FL |
| Power Dissipation (Max) | 2.1 W, 30 W |
| Rds On (Max) | 3.1 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) | 2 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
BSZ031NE2LS5
MOSFET OptiMOS™ 5 25V and 30V
MOSFET linear mode operation and SOA power MOSFETs
Infineon-MA005581706-MaterialContentSheet-v01_00-EN
Infineon-BSZ031NE2LS5-DS-v02_00-EN
Press Release OptiMOS™ 5 25V 30V English.pdf
FIT Report - BSZ031NE2LS5
MOSFET OptiMOS™ and StrongIRFET™
BSZ031NE2LS5ATMA1 | Datasheet