Description
General part information
IAUZN04S7N049ATMA1
The IAUZN04S7N049 is a high-current, low-RDS(on)power MOSFET in a 3x3mm² advanced leadless package with Cu-Clip for low package Ron and min. stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for automotive applications such as power distribution, body control modules, and electric motors.
Technical Specifications
Parameters and characteristics for this part
| Specification | IAUZN04S7N049ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 14 A |
| Current - Continuous Drain (Id) (Tj) | 70 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 7 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 14 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 922 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TSDSON-8-44 |
| Power Dissipation (Max) | 45 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 4.93 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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