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EVAL1ED3142MU12FSICTOBO1

EVAL1ED3142MU12FSICTOBO1

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INFINEON

THE EVAL-1ED3142MX12F-SIC IS IN HALF-BRIDGE CONFIGURATION WITH 2300 V, 6.5 A ,3 KV (RMS) SINGLE-CHANNEL ISOLATED GATE DRIVER AND TWO GATE DRIVER ICS (1ED3142MU12F) TO DRIVE POWER SWITCHES SUCH AS IGBTS, MOSFETS AND SIC MOSFETS.

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EVAL1ED3142MU12FSICTOBO1

EVAL1ED3142MU12FSICTOBO1

Active
INFINEON

THE EVAL-1ED3142MX12F-SIC IS IN HALF-BRIDGE CONFIGURATION WITH 2300 V, 6.5 A ,3 KV (RMS) SINGLE-CHANNEL ISOLATED GATE DRIVER AND TWO GATE DRIVER ICS (1ED3142MU12F) TO DRIVE POWER SWITCHES SUCH AS IGBTS, MOSFETS AND SIC MOSFETS.

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Description

General part information

EVAL1ED3142MU12FSICTOBO1

The EVAL-1ED3142MU12F-SIC is in half-bridge configuration with two gate driver ICs (1ED3142MU12F) to drive power switches such asIGBTs,MOSFETsandSiC MOSFETs. This board comes pre-populated with two CoolSiC™ MOSFETIMZA120R020M1H, an additional gate driver IC is used for isolated over-current feedback signal from high voltage side to logic control side, fast operational amplifier is used as comparator for over-current detection. It is best suited for double-pulse testing. 1ED3142MU12F belongs to theEiceDRIVER™ Compact1ED31xx family (X3 compact family). 1ED3142MU12F offers separate sink and source output, accurate and stable timing, active shutdown to ensure a safe power transistor off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar.

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Parameters and characteristics for this part

SpecificationEVAL1ED3142MU12FSICTOBO1
ContentsBoard

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