AS4C32M16SB-7BIN

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Alliance Memory, Inc.

DRAM CHIP SDRAM 512M-BIT 32MX16 3.3V 54-PIN TSOP-II TRAY

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AS4C32M16SB-7BIN

Active

Alliance Memory, Inc.

DRAM CHIP SDRAM 512M-BIT 32MX16 3.3V 54-PIN TSOP-II TRAY

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Specifications Pricing Series Description Documents

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 16.37
		10	$ 15.16
		25	$ 14.95
		40	$ 14.76
		80	$ 12.94
		348	$ 12.38
		696	$ 12.30

Description

General part information

AS4C32 Series

SDRAM Memory IC 512Mbit Parallel 143 MHz 6 ns 54-FBGA (8x8)

Documents

Technical documentation and resources

No documents available

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	AS4C32M16SB-7BIN	AS4C32 Series

Access Time	6 ns	0.4 - 700 ns
Clock Frequency	143 MHz	133 - 933 MHz
Grade	-	Automotive
Memory Format	DRAM	DRAM
Memory Interface	Parallel	Parallel, SSTL_2, SSTL_18, HSUL_12
Memory Organization	32M x 16	32M x 16
Memory Organization	-	32 M
Memory Size	64 MB	1 - 256 Gbit
Memory Type	Volatile	Volatile
Mounting Type	Surface Mount	Surface Mount
Operating Temperature [Max]	85 °C	70 - 105 °C
Operating Temperature [Min]	-40 °C	-40 - 0 °C
Package / Case	54-TFBGA	96-VFBGA, 60-TFBGA, 54-TFBGA, 84-TFBGA, 134-VFBGA, 54-VFBGA, 66-TSSOP
Package / Case	-	0.4 in
Package / Case	-	0.4 in
Qualification	-	AEC-Q100
Supplier Device Package	54-FBGA (8x8)	54-TSOP II, 96-FBGA (8x13), 60-FBGA (8x13), 54-FBGA (8x8), 84-FBGA (8x12.5), 134-FBGA (10x11.5), 84-TFBGA (8x12.5), 54-BGA (9x8), 66-TSOP II
Technology	SDRAM	SDRAM, SDRAM - DDR3, SDRAM - DDR2, SDRAM - Mobile LPDDR2, SDRAM - Mobile SDRAM
Voltage - Supply [Max]	3.6 V	1.3 - 3.6 V
Voltage - Supply [Min]	3 V	1.14 - 3 V
Write Cycle Time - Word, Page	14 ns	2 - 15 ns

AS4C32 Series

DRAM CHIP SDRAM 256M-BIT 32M X 8 3.3V 54-PIN TSOP-II

Part	Access Time	Memory Size	Technology	Memory Type	Memory Interface	Operating Temperature [Max]	Operating Temperature [Min]	Memory Organization	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Format	Clock Frequency	Supplier Device Package	Memory Organization	Package / Case	Write Cycle Time - Word, Page
Alliance Memory, Inc. AS4C32M8SA-6TINTR	5.5 ns	256 Gbit	SDRAM	Volatile	Parallel	85 °C	-40 °C	32 M	Surface Mount	3.6 V	3 V	DRAM	166 MHz	54-TSOP II
Alliance Memory, Inc. AS4C32M16D3-12BINTR	20 ns	64 MB	SDRAM - DDR3	Volatile	Parallel	95 °C	-40 °C		Surface Mount	1.575 V	1.425 V	DRAM	800 MHz	96-FBGA (8x13)	32M x 16	96-VFBGA
Alliance Memory, Inc. AS4C32M16D1-5BAN	700 ps	64 MB		Volatile	SSTL_2	105 °C	-40 °C		Surface Mount	2.7 V	2.3 V	DRAM	200 MHz	60-FBGA (8x13)	32M x 16	60-TFBGA	15 ns
Alliance Memory, Inc. AS4C32M16SA-7BCNTR	5.4 ns	64 MB	SDRAM	Volatile	Parallel	70 °C	0 °C		Surface Mount	3.6 V	3 V	DRAM	143 MHz	54-FBGA (8x8)	32M x 16	54-TFBGA	2 ns
Alliance Memory, Inc. AS4C32M16SB-6TINTR	5 ns	64 MB	SDRAM	Volatile	Parallel	85 °C	-40 °C		Surface Mount	3.6 V	3 V	DRAM	166 MHz	54-TSOP II	32M x 16		12 ns
Alliance Memory, Inc. AS4C32M16D2C-25BIN	0.4 ns	64 MB	SDRAM - DDR2	Volatile	SSTL_18	95 °C	-40 °C		Surface Mount	1.9 V	1.7 V	DRAM	400 MHz	84-FBGA (8x12.5)	32M x 16	84-TFBGA	15 ns
Alliance Memory, Inc. AS4C32M32MD2A-25BIN		1 Mbit	SDRAM - Mobile LPDDR2	Volatile	Parallel	85 °C	-40 °C	32 M	Surface Mount	1.95 V	1.14 V	DRAM	400 MHz	134-FBGA (10x11.5)		134-VFBGA	15 ns
Alliance Memory, Inc. AS4C32M16SB-7BIN	6 ns	64 MB	SDRAM	Volatile	Parallel	85 °C	-40 °C		Surface Mount	3.6 V	3 V	DRAM	143 MHz	54-FBGA (8x8)	32M x 16	54-TFBGA	14 ns
Alliance Memory, Inc. AS4C32M16D2C-25BCN	0.4 ns	64 MB	SDRAM - DDR2	Volatile	SSTL_18	85 °C	0 °C		Surface Mount	1.9 V	1.7 V	DRAM	400 MHz	84-FBGA (8x12.5)	32M x 16	84-TFBGA	15 ns
Alliance Memory, Inc. AS4C32M16D2-25BANTR	400 ps	64 MB	SDRAM - DDR2	Volatile	Parallel	105 °C	-40 °C		Surface Mount	1.9 V	1.7 V	DRAM	400 MHz	84-TFBGA (8x12.5)	32M x 16	84-TFBGA	15 ns