Specification	SICW028N120A4-BP

Current - Continuous Drain (Id) (Tc)	80 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On)	16 V
Drive Voltage (Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	168 nC
Input Capacitance (Ciss) (Max)	3570 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-4
Package Name	TO-247-4
Power Dissipation (Max)	375 W
Rds On (Max)	30 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-5 V
Vgs (Max) Positive	22 V
Vgs(th) (Max)	3 V

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