Zenode.ai Logo
BSC077N12NS3GATMA1

BSC077N12NS3GATMA1

Active
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; SUPERSO8 5X6 PACKAGE; 7.7 MOHM;

Find alt
BSC077N12NS3GATMA1

BSC077N12NS3GATMA1

Active
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; SUPERSO8 5X6 PACKAGE; 7.7 MOHM;

Find alt

Description

General part information

BSC077N12NS3GATMA1

The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications.The 120 V OptiMOS™ technology gives new possibilites for optimized solutions.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC077N12NS3GATMA1
Current - Continuous Drain (Id) (Ta)13.4 A
Current - Continuous Drain (Id) (Tc)98 A
Drain to Source Voltage (Vdss)120 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)88 nC
Input Capacitance (Ciss) (Max)5700 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TDSON-8-1
Power Dissipation (Max)139 W
Rds On (Max)7.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources