Description
General part information
ISP650P06NMXTSA1
OptiMOS™P-channel 60V power MOSFETsin SOT-223 package is the new technology targeted forconsumer applications. Main advantage of OptiMOS™P-channel MOSFETsis the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™P-channel MOSFETssuitable for high quality demanding applications. The product improve efficiency at low loads due to low Qg.and is available in logic level featuring a wide RDS(on)range.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISP650P06NMXTSA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 3.7 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 39 nC |
| Input Capacitance (Ciss) (Max) | 1600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Package Name | PG-SOT223-4 |
| Power Dissipation (Max) | 4.2 W, 1.8 W |
| Rds On (Max) | 65 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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