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INFINEON FF4MR20KM1HPHPSA1

FF3MR20KM1HPHPSA1

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INFINEON

SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 325 A, 2 KV, 0.004 OHM, MODULE

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INFINEON FF4MR20KM1HPHPSA1

FF3MR20KM1HPHPSA1

Active
INFINEON

SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 325 A, 2 KV, 0.004 OHM, MODULE

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Description

General part information

FF3MR20KM1HPHPSA1

62 mmCoolSiC™ MOSFEThalf bridge module 2000 V, 2.6 mΩ G1 in the well known 62mm housing combined with M1H chip technology and pre-appliedThermal Interface Material(TIM).

Technical Specifications

Parameters and characteristics for this part

SpecificationFF3MR20KM1HPHPSA1
Channel Count2
ConfigurationN-Channel, Half Bridge
Configuration - FeaturesHalf Bridge
Current - Continuous Drain (Id) (Tc)325 A
Drain to Source Voltage (Vdss)2000 V
Gate Charge (Max)1560 nC
IGBT TypeTrench Field Stop
InputStandard
Input Capacitance (Ciss) (Max)48200 pF
Mounting TypeChassis Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseModule
Package NameAG-62MMHB
Rds On (Max)4 mOhm
TechnologySilicon Carbide (SiC)
Vgs(th) (Max)5.15 V
Voltage - Collector Emitter Breakdown (Max)2000 V

Pricing

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CAD

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