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BSC046N02KSGAUMA1

BSC046N02KSGAUMA1

Obsolete
INFINEON

OPTIMOS™ N-CHANNEL POWER MOSFET 20 V ; SUPERSO8 5X6 PACKAGE; 4.6 MOHM; SUPER LOGIC LEVEL

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BSC046N02KSGAUMA1

BSC046N02KSGAUMA1

Obsolete
INFINEON

OPTIMOS™ N-CHANNEL POWER MOSFET 20 V ; SUPERSO8 5X6 PACKAGE; 4.6 MOHM; SUPER LOGIC LEVEL

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Description

General part information

BSC046N02KSGAUMA1

Infineon’s innovative products serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar microinverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC046N02KSGAUMA1
Current - Continuous Drain (Id) (Ta)19 A
Current - Continuous Drain (Id) (Tc)80 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)2.5 V
Drive Voltage (Min Rds On)4.5 V
FET TypeN-Channel
Gate Charge (Max)27.6 nC
Input Capacitance (Ciss) (Max)4100 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TDSON-8-1
Power Dissipation (Max)2.8 W, 48 W
Rds On (Max)4.6 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max)1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

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