SI4914DY-T1-E3
ObsoleteVishay Dale
MOSFET 2N-CH 30V 5.5A/5.7A 8SOIC
SI4914DY-T1-E3
ObsoleteVishay Dale
MOSFET 2N-CH 30V 5.5A/5.7A 8SOIC
Description
General part information
SI4914DY-T1-E3
MOSFET 2N-CH 30V 5.5A/5.7A 8SOIC
Technical Specifications
Parameters and characteristics for this part
| Specification | SI4914DY-T1-E3 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Half Bridge |
| Current - Continuous Drain (Id) (Maximum) | 5.7 A |
| Current - Continuous Drain (Id) (Typical) | 5.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 8.5 nC |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Power - Max (Value 1) | 1.1 W |
| Power - Max (Value 2) | 1.16 W |
| Rds On (Max) | 23 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available