Specification	IGL65R055D2XUMA1

Current - Continuous Drain (Id) (Tc)	22 A
Drain to Source Voltage (Vdss)	650 V
FET Type	N-Channel
Gate Charge (Max)	4.7 nC
Input Capacitance (Ciss) (Max)	340 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-TDFN Exposed Pad
Package Name	PG-TSON-8-U06
Power Dissipation (Max)	111 W
Technology	GaNFET (Gallium Nitride)
Vgs (Max)	-10 V
Vgs(th) (Max)	1.6 V

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