DMN1032UCP4-7
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN1032UCP4-7
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN1032UCP4-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 3.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | DSBGA, 4-XFBGA |
| Power Dissipation (Max) [Max] | 790 mW |
| Rds On (Max) @ Id, Vgs | 28 mOhm |
| Supplier Device Package | X1-DSN1010-4 (Type B) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 3000 | $ 0.15 | |
Description
General part information
DMN1032UCP4 Series
This 2ndgeneration Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON)per footprint area.
Documents
Technical documentation and resources