NSVBCP5616MTWG
UnknownON Semiconductor
GENERAL PURPOSE TRANSISTOR MEDIUM POWER, NPN 80 V, 1 A
NSVBCP5616MTWG
UnknownON Semiconductor
GENERAL PURPOSE TRANSISTOR MEDIUM POWER, NPN 80 V, 1 A
Description
General part information
BCP56M Series
The BCP56MTW is designed for general purpose amplifier applications. It is housed in DFN2020−3 offering superior thermal performance. The transistor is ideal for medium−power surface mount applications where board space and reliability are at a premium.
Technical Specifications
Parameters and characteristics for this part
| Specification | NSVBCP5616MTWG |
|---|---|
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 100 |
| Frequency - Transition | 140 MHz |
| Grade | Automotive |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | 3-WDFN Exposed Pad |
| Package Length | 2 mm |
| Package Name | 3-WDFNW |
| Package Width | 2 mm |
| Power - Max | 1.5 W |
| Qualification | AEC-Q101 |
| Transistor Type | NPN |
| Vce Saturation (Max) | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
Pricing
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