Specification	NDS8958

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	4 A
Current - Continuous Drain (Id) (Typical)	5.3 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Max)	30 nC
Input Capacitance (Ciss) (Max)	720 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power - Max	900 mW
Rds On (Max)	35 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.8 V

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