SI8902EDB-T2-E1
ActiveVishay Dale
MOSFET 2N-CH 20V 3.9A 6MICROFOOT
SI8902EDB-T2-E1
ActiveVishay Dale
MOSFET 2N-CH 20V 3.9A 6MICROFOOT
Description
General part information
SI8902EDB-T2-E1
MOSFET 2N-CH 20V 3.9A 6MICROFOOT
Technical Specifications
Parameters and characteristics for this part
| Specification | SI8902EDB-T2-E1 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel (Dual) Common Drain |
| Current - Continuous Drain (Id) | 3.9 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-MICRO FOOT®CSP |
| Package Length | 2.36 mm |
| Package Name | 6-Micro Foot™ |
| Package Width | 1.56 mm |
| Power - Max | 1 VA |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1 V |
Pricing
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