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FCPF220N80

FCPF220N80

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> II, 800 V, 23 A, 220 MΩ, TO-220F

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FCPF220N80

FCPF220N80

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> II, 800 V, 23 A, 220 MΩ, TO-220F

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Description

General part information

FCPF220N80 Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationFCPF220N80
Current - Continuous Drain (Id) (Tc)23 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)105 nC
Input Capacitance (Ciss) (Max)4560 pF, 4560 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220F-3
Power Dissipation (Max)44 W
Rds On (Max)220 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

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CAD

3D models and CAD resources for this part