CDBDSC3650-G

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Comchip Technology

DIODE SIL CARBIDE 650V 11A DPAK

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Comchip Technology

DIODE SIL CARBIDE 650V 11A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	CDBDSC3650-G

Capacitance @ Vr, F	181 pF
Current - Average Rectified (Io)	11 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

DIODE SIL CARBIDE 650V 11A DPAK

Part	Mounting Type	Package / Case	Supplier Device Package	Capacitance @ Vr, F	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If
Comchip Technology CDBDSC3650-G	Surface Mount	DPAK (2 Leads + Tab), SC-63, TO-252-3	DPAK	181 pF	11 A	650 V	0 ns	175 ░C	-55 C	No Recovery Time	100 µA	SiC (Silicon Carbide) Schottky	1.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.71

General part information

Diode 650 V 11A Surface Mount DPAK

Technical documentation and resources

No documents available