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GE10022

GE10022

Active
ON Semiconductor

TRANS NPN DARL 240V 40A TO-204AE

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GE10022

GE10022

Active
ON Semiconductor

TRANS NPN DARL 240V 40A TO-204AE

Find alt

Description

General part information

GE10022

Bipolar (BJT) Transistor NPN - Darlington 240 V 40 A 250 W Through Hole TO-204AE

Technical Specifications

Parameters and characteristics for this part

SpecificationGE10022
Current - Collector (Ic) (Max)40 A
Current - Collector Cutoff (Max)250 µA
DC Current Gain (hFE) (Min)1000
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-204AE
Package NameTO-204AE
Power - Max250 VA
Transistor TypeNPN, Darlington
Vce Saturation (Max)2.5 V
Voltage - Collector Emitter Breakdown (Max)240 V

Pricing

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