WPH4003-1E

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ON Semiconductor

TRANS MOSFET N-CH SI 1.7KV 3A 3-PIN(3+TAB) TO-3PF TUBE

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DocumentsDatasheet Package Drawing-340AH-TO-3PF-3L +1

WPH4003-1E

Active

ON Semiconductor

TRANS MOSFET N-CH SI 1.7KV 3A 3-PIN(3+TAB) TO-3PF TUBE

Deep-Dive with AI

DocumentsDatasheet Package Drawing-340AH-TO-3PF-3L +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	WPH4003-1E

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	1700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	850 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3P-3 Full Pack
Power Dissipation (Max)	3 W, 55 W
Rds On (Max) @ Id, Vgs	10.5 Ohm
Supplier Device Package	TO-3PF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

WPH4003 Series

N-Channel Power MOSFET 1700V, 3A, 10.5Ω

Part	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Technology
ON Semiconductor WPH4003-1E	3 W, 55 W	Through Hole	1700 V	30 V	TO-3P-3 Full Pack	2.5 A	10.5 Ohm	850 pF	N-Channel	TO-3PF	10 V	48 nC	150 °C	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

WPH4003 Series

The 1700V HV MOSFET 'WPH4003', with low on resistance and high speed switching, contributes to low power consumption and high efficiency of the industrial equipment-related applications which require HV power supplies. In addition, the flyback circuit with this product can realize the 'cost effective' and 'environment-friendly' applications with 'simplified gate drive circuit' and 'reduced substrate area' by reducing parts count.