MR756
ActiveSolid State Inc.
DIODE GEN PURP 600V 6A
MR756
ActiveSolid State Inc.
DIODE GEN PURP 600V 6A
Description
General part information
MR756
Diode 600 V 6A
Technical Specifications
Parameters and characteristics for this part
| Specification | MR756 |
|---|---|
| Current - Average Rectified (Io) | 6 A |
| Current - Reverse Leakage | 25 µA |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -65 °C |
| Speed | Standard Recovery |
| Speed - Fast Recovery (Minimum) | 200 mA, 500 ns |
| Speed - Recovery Current | 200 mA, 200 mA |
| Speed - Recovery Time | 500 ns |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) | 900 mV |
Pricing
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