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RS1MLSHRVG - mfg_SOD-123H

RS1MLSHRVG

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Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1.2A SOD123HE

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RS1MLSHRVG - mfg_SOD-123H

RS1MLSHRVG

Active
Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1.2A SOD123HE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationRS1MLSHRVG
Current - Average Rectified (Io)1.2 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseSOD-123H
Reverse Recovery Time (trr)300 ns
Speed200 mA, 500 ns
Supplier Device PackageSOD-123HE
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1000 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.50
Digi-Reel® 1$ 0.50
Tape & Reel (TR) 12000$ 0.09
15000$ 0.09
21000$ 0.09
30000$ 0.08
75000$ 0.08

Description

General part information

RS1M Series

Diode 1000 V 1.2A Surface Mount SOD-123HE

Documents

Technical documentation and resources

No documents available