DGD2104AS8-13

Obsolete

Diodes Inc

IC GATE DRVR HALF-BRIDGE 8SO

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DGD2104AS8-13

Obsolete

Diodes Inc

IC GATE DRVR HALF-BRIDGE 8SO

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DGD2104AS8-13

Channel Type	Synchronous
Current - Peak Output (Source, Sink) [custom]	360 mA
Current - Peak Output (Source, Sink) [custom]	210 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	50 ns
Rise / Fall Time (Typ) [custom]	100 ns
Supplier Device Package	8-SO
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

DGD2104M Series

HALF-BRIDGE GATE DRIVER IN SO-8

Part	Supplier Device Package	Input Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Logic Voltage - VIL, VIH	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Channel Type	Driven Configuration	Gate Type	Package / Case	Package / Case [y]	Package / Case [x]	Number of Drivers	High Side Voltage - Max (Bootstrap) [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]
Diodes Inc DGD2104S8-13	8-SO	Non-Inverting	20 V	10 VDC	150 °C	-40 °C	Surface Mount	0.8 V 2.5 V	35 ns	70 ns	Synchronous	Half-Bridge	IGBT N-Channel MOSFET	8-SOIC	3.9 mm	0.154 in	2	600 V	290 mA	600 mA
Diodes Inc DGD2104MS8-13	8-SO	Non-Inverting	20 V	10 VDC	150 °C	-40 °C	Surface Mount	0.8 V 2.5 V	35 ns	70 ns	Synchronous	Half-Bridge	IGBT N-Channel MOSFET	8-SOIC	3.9 mm	0.154 in	2	600 V	290 mA	600 mA
Diodes Inc DGD2104AS8-13	8-SO	Non-Inverting	20 V	10 VDC	150 °C	-40 °C	Surface Mount	0.8 V 2.5 V	50 ns	100 ns	Synchronous	Half-Bridge	IGBT N-Channel MOSFET	8-SOIC	3.9 mm	0.154 in	2	600 V	210 mA	360 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

DGD2104M Series

The DGD2104M is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High-voltage processing techniques enable the DGD2104M’s high side to switch to 600V in a bootstrap operation.The DGD2104M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver outputs feature high-pulse current buffers designed for minimum driver cross conduction.The DGD2104M is offered in the SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range.

Documents

Technical documentation and resources