SB3100E-G

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Comchip Technology

DIODE SCHOTTKY 100V 3A DO201AD

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Comchip Technology

DIODE SCHOTTKY 100V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	SB3100E-G

Capacitance @ Vr, F	250 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-201AD, Axial
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	850 mV

DIODE SCHOTTKY 100V 3A DO201AD

Part	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Supplier Device Package	Speed	Current - Average Rectified (Io)	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Voltage - DC Reverse (Vr) (Max) [Max]
Comchip Technology SB3100E-G	500 µA	250 pF	DO-201AD	200 mA, 500 ns	3 A	DO-201AD, Axial	850 mV	Through Hole	150 °C	-65 C	Schottky	100 V

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General part information

Diode 100 V 3A Through Hole DO-201AD

Technical documentation and resources

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