EPC2010

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Efficient Power Conversion Corporation

GANFET N-CH 200V 12A DIE

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Unknown

Efficient Power Conversion Corporation

GANFET N-CH 200V 12A DIE

Technical Specifications

Parameters and characteristics for this part

Specification	EPC2010

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds	540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	Die
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	Die
Technology	GaNFET (Gallium Nitride)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-4 V
Vgs(th) (Max) @ Id	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 12A (Ta) Surface Mount Die

Technical documentation and resources