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BYV29D-600PJ - TO-252-3

BYV29D-600PJ

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 9A DPAK

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BYV29D-600PJ - TO-252-3

BYV29D-600PJ

Active
WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 9A DPAK

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBYV29D-600PJ
Current - Average Rectified (Io)9 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)75 ns
Speed200 mA, 500 ns
Supplier Device PackageDPAK
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.62
10$ 0.54
100$ 0.38
500$ 0.31
1000$ 0.27
Digi-Reel® 1$ 0.62
10$ 0.54
100$ 0.38
500$ 0.31
1000$ 0.27
Tape & Reel (TR) 2500$ 0.24
5000$ 0.22
12500$ 0.21
25000$ 0.21

Description

General part information

BYV29 Series

Diode 600 V 9A Surface Mount DPAK

Documents

Technical documentation and resources

No documents available