X28HC64P-12
ActiveIC EEPROM 64KBIT PARALLEL 28DIP
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X28HC64P-12
ActiveIC EEPROM 64KBIT PARALLEL 28DIP
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | X28HC64P-12 | X28HC64 Series |
|---|---|---|
| - | - | |
| Access Time | 120 ns | 90 - 120 ns |
| Memory Format | EEPROM | EEPROM |
| Memory Interface | Parallel | Parallel |
| Memory Organization | 8 K | 8 K |
| Memory Size | 64 Kbit | 64 Kbit |
| Memory Type | Non-Volatile | Non-Volatile |
| Mounting Type | Through Hole | Through Hole, Surface Mount |
| Operating Temperature [Max] | 70 °C | 70 - 85 °C |
| Operating Temperature [Min] | 0 °C | -40 - 0 °C |
| Package / Case | 28-DIP | 28-DIP, 32-LCC (J-Lead), 28-CDIP |
| Package / Case | 0.6 in | 0.6 in |
| Package / Case | 15.24 mm | 0.6 - 15.24 mm |
| Package / Case | - | 15.24 mm |
| Supplier Device Package | 28-PDIP | 28-PDIP, 32-PLCC, 28-SOIC, 28-CERDIP |
| Supplier Device Package | - | 11.43 |
| Supplier Device Package | - | 13.97 |
| Technology | EEPROM | EEPROM |
| Voltage - Supply [Max] | 5.5 V | 5.5 V |
| Voltage - Supply [Min] | 4.5 V | 4.5 V |
| Write Cycle Time - Word, Page | 5 ms | 5 ms |
X28HC64 Series
64k, 8k x 8 Bit; 5 Volt, Byte Alterable EEPROM
| Part | Memory Interface | Supplier Device Package | Memory Organization | Memory Size | Memory Type | Write Cycle Time - Word, Page | Technology | Package / Case | Package / Case | Package / Case | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Format | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Access Time | Supplier Device Package [y] | Supplier Device Package [x] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation X28HC64P-12 | Parallel | 28-PDIP | 8 K | 64 Kbit | Non-Volatile | 5 ms | EEPROM | 28-DIP | 0.6 in | 15.24 mm | 4.5 V | 5.5 V | EEPROM | Through Hole | 70 °C | 0 °C | 120 ns | |||
Renesas Electronics Corporation X28HC64JZ-12 | Parallel | 32-PLCC | 8 K | 64 Kbit | Non-Volatile | 5 ms | EEPROM | 32-LCC (J-Lead) | 4.5 V | 5.5 V | EEPROM | Surface Mount | 70 °C | 0 °C | 120 ns | 11.43 | 13.97 | |||
Renesas Electronics Corporation X28HC64PIZ-12 | ||||||||||||||||||||
Renesas Electronics Corporation X28HC64JIZ-12 | Parallel | 32-PLCC | 8 K | 64 Kbit | Non-Volatile | 5 ms | EEPROM | 32-LCC (J-Lead) | 4.5 V | 5.5 V | EEPROM | Surface Mount | 85 °C | -40 °C | 120 ns | 11.43 | 13.97 | |||
Renesas Electronics Corporation X28HC64SIZ-70 | Parallel | 28-SOIC | 8 K | 64 Kbit | EEPROM | |||||||||||||||
Renesas Electronics Corporation X28HC64J-90 | Parallel | 32-PLCC | 8 K | 64 Kbit | Non-Volatile | 5 ms | EEPROM | 32-LCC (J-Lead) | 4.5 V | 5.5 V | EEPROM | Surface Mount | 70 °C | 0 °C | 90 ns | 11.43 | 13.97 | |||
Renesas Electronics Corporation X28HC64D-90 | Parallel | 28-CERDIP | 8 K | 64 Kbit | Non-Volatile | 5 ms | EEPROM | 28-CDIP | 0.6 in | 4.5 V | 5.5 V | EEPROM | Through Hole | 70 °C | 0 °C | 90 ns | 15.24 mm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
X28HC64 Series
The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DATA Polling and Toggle Bit Polling, two methods providing early end of write detection. In addition, the X28HC64 includes a user-optional software data protection mode that further enhances Intersil’s hardware write protect capability. Intersil EEPROMs are designed and tested for applications requiring extended endurance. Inherent data retention is greater than 100 years.
Documents
Technical documentation and resources