MB1M-G

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Comchip Technology

BRIDGE DIODE GPP 0.8A 100V MBM

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Comchip Technology

BRIDGE DIODE GPP 0.8A 100V MBM

Technical Specifications

Parameters and characteristics for this part

Specification	MB1M-G

Current - Average Rectified (Io)	800 mA
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-DIP
Package / Case	0.2 in
Package / Case	0.2 in
Supplier Device Package	MBM
Technology	Standard
Voltage - Peak Reverse (Max) [Max]	100 V

BRIDGE DIODE GPP 0.8A 100V MBM

Part	Supplier Device Package	Current - Average Rectified (Io)	Package / Case	Package / Case	Package / Case	Current - Reverse Leakage @ Vr	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Diode Type	Voltage - Peak Reverse (Max) [Max]
Comchip Technology MB1M-G	MBM	800 mA	4-DIP	0.2 in	0.2 in	5 µA	Standard	-55 °C	150 °C	Through Hole	Single Phase	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bridge Rectifier Single Phase Standard 100 V Through Hole MBM

Technical documentation and resources