CMS45P03H8-HF

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Comchip Technology

MOSFET P-CH 30V 9.6A/45A DFN5X6

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Comchip Technology

MOSFET P-CH 30V 9.6A/45A DFN5X6

Technical Specifications

Parameters and characteristics for this part

Specification	CMS45P03H8-HF

Current - Continuous Drain (Id) @ 25°C	9.6 A, 45 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC
Input Capacitance (Ciss) (Max) @ Vds	2215 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2 W, 45 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	PR-PAK
Supplier Device Package	DFN5x6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

MOSFET P-CH 30V 9.6A/45A DFN5X6

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs (Max)	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Comchip Technology CMS45P03H8-HF	15 mOhm	4.5 V, 10 V	P-Channel	22 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	20 V	8-PowerTDFN	Surface Mount	2215 pF	2.5 V	2 W, 45 W	PR-PAK	DFN5x6	9.6 A, 45 A	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 9.6A (Ta), 45A (Tc) 2W (Ta), 45W (Tc) Surface Mount DFN5x6 (PR-PAK)

Technical documentation and resources