
RGTVX6TS65GC11
NRNDRohm Semiconductor
IGBTS 650V 80A TO-247N FIELD STP TRNCH IGBT

RGTVX6TS65GC11
NRNDRohm Semiconductor
IGBTS 650V 80A TO-247N FIELD STP TRNCH IGBT
Description
General part information
RGTVX6TS65GC11
IGBTS 650V 80A TO-247N FIELD STP TRNCH IGBT
Technical Specifications
Parameters and characteristics for this part
| Specification | RGTVX6TS65GC11 |
|---|---|
| Current - Collector (Ic) (Max) | 144 A |
| Current - Collector Pulsed (Icm) | 320 A |
| Gate Charge | 171 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247N |
| Power - Max | 404 W |
| Switching Energy (Off) | 1.8 mJ |
| Switching Energy (On) | 2.65 mJ |
| Td (off) @ 25°C | 201 ns |
| Td (on) @ 25°C | 45 ns |
| Test Condition Current | 80 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 1.9 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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