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RGTVX6TS65GC11

RGTVX6TS65GC11

NRND
Rohm Semiconductor

IGBTS 650V 80A TO-247N FIELD STP TRNCH IGBT

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RGTVX6TS65GC11

RGTVX6TS65GC11

NRND
Rohm Semiconductor

IGBTS 650V 80A TO-247N FIELD STP TRNCH IGBT

Find alt

Description

General part information

RGTVX6TS65GC11

IGBTS 650V 80A TO-247N FIELD STP TRNCH IGBT

Technical Specifications

Parameters and characteristics for this part

SpecificationRGTVX6TS65GC11
Current - Collector (Ic) (Max)144 A
Current - Collector Pulsed (Icm)320 A
Gate Charge171 nC
IGBT TypeTrench Field Stop
Input TypeStandard
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseTO-247-3
Package NameTO-247N
Power - Max404 W
Switching Energy (Off)1.8 mJ
Switching Energy (On)2.65 mJ
Td (off) @ 25°C201 ns
Td (on) @ 25°C45 ns
Test Condition Current80 A
Test Condition Resistance10 Ohm
Test Condition Voltage400 V
Test Condition Voltage (Secondary)15 V
Vce(on) (Max)1.9 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

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