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MJD44H11T4

MJD44H11T4

Obsolete
ON Semiconductor

8 A, 80 V NPN BIPOLAR POWER TRANSISTOR

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MJD44H11T4

MJD44H11T4

Obsolete
ON Semiconductor

8 A, 80 V NPN BIPOLAR POWER TRANSISTOR

Find alt

Description

General part information

MJD44H11 Series

The Bipolar Power Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD44H11T4
Current - Collector (Ic) (Max)8 A
Current - Collector Cutoff (Max)1 µA
DC Current Gain (hFE) (Min)60
Frequency - Transition85 MHz
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameDPak
Power - Max20 W
Transistor TypeNPN
Vce Saturation (Max)1 V
Voltage - Collector Emitter Breakdown (Max)80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources