Specification	AON6922

Channel Count	2
Configuration	N-Channel, Asymmetrical
Configuration - Features	Dual
Current - Continuous Drain (Id) (Maximum)	31 A
Current - Continuous Drain (Id) (Typical)	18 A
Drain to Source Voltage (Vdss)	25 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max)	2340 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-WDFN Exposed Pad
Package Length	5 mm
Package Name	8-DFN-EP
Package Width	6 mm
Power - Max (Value 1)	2 W
Power - Max (Value 2)	2.2 W
Rds On (Max)	3.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.7 V

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