DMN65D8LDWQ-13
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN65D8LDWQ-13
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMN65D8LDWQ-13
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN65D8LDWQ-13 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 180 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 0.87 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 22 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Package Name | SOT-363 |
| Power - Max | 300 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) | 6 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2 V |
Pricing
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CAD
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