EKG1020
ActiveSanken Electric USA Inc.
LOW RON MOSFET 100V/20A/0.033
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EKG1020
ActiveSanken Electric USA Inc.
LOW RON MOSFET 100V/20A/0.033
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | EKG1020 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 45 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 55 W |
| Rds On (Max) @ Id, Vgs | 12.5 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
EKG1020
N-Channel 100 V 20A (Ta) 55W (Tc) Through Hole TO-220-3
Documents
Technical documentation and resources