SF2003G C0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 20A TO220AB

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Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 20A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SF2003G C0G

Capacitance @ Vr, F	80 pF
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	975 mV

Part	Voltage - Forward (Vf) (Max) @ If	Package / Case	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Technology	Speed	Capacitance @ Vr, F	Supplier Device Package	Mounting Type	Qualification	Grade
Taiwan Semiconductor Corporation SF2003G C0G	975 mV	TO-220-3	5 µA	150 °C	-55 °C	35 ns	Standard	200 mA 500 ns	80 pF	TO-220AB	Through Hole
Taiwan Semiconductor Corporation SF2003PTHC0G	1.1 V	TO-247-3	10 µA	150 °C	-55 °C	35 ns	Standard	200 mA 500 ns	175 pF	TO-247AD (TO-3P)	Through Hole	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 150 V 20A Through Hole TO-220AB

Technical documentation and resources