STW200NF03

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STMicroelectronics

MOSFET N-CH 30V 120A TO247-3

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STMicroelectronics

MOSFET N-CH 30V 120A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW200NF03

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	280 nC
Input Capacitance (Ciss) (Max) @ Vds	10000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	350 W
Rds On (Max) @ Id, Vgs	2.8 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 30V 120A TO247-3

Part	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology
STMicroelectronics STW200NF03	N-Channel	30 V	TO-247-3	10000 pF	20 V	280 nC	4 V	-55 °C	175 ░C	2.8 mOhm	350 W	Through Hole	10 V	120 A	TO-247-3	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 120A (Tc) 350W (Tc) Through Hole TO-247-3

Technical documentation and resources