MJD32C1
ActiveON Semiconductor
TRANSISTOR
MJD32C1
ActiveON Semiconductor
TRANSISTOR
Description
General part information
MJD32C1
Bipolar (BJT) Transistor PNP 100 V 3 A 3MHz 15 W Surface Mount TO-252-3
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD32C1 |
|---|---|
| Current - Collector (Ic) (Max) | 3 A |
| Current - Collector Cutoff (Max) | 1 µA |
| DC Current Gain (hFE) (Min) | 10 |
| Frequency - Transition | 3 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252-3 |
| Power - Max | 15 W |
| Transistor Type | PNP |
| Vce Saturation (Max) | 1.2 V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
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