FGH75T65SQDNL4
ActiveTRANS IGBT CHIP N-CH 650V 150A 375W 4-PIN(4+TAB) TO-247 TUBE
FGH75T65SQDNL4
ActiveTRANS IGBT CHIP N-CH 650V 150A 375W 4-PIN(4+TAB) TO-247 TUBE
Description
General part information
FGH75T65SQDNL4
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop IV Trench construction, and providessuperior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged freewheeling diode with a low forward voltage.
Technical Specifications
Parameters and characteristics for this part
| Specification | FGH75T65SQDNL4 |
|---|---|
| Current - Collector (Ic) (Max) | 200 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Gate Charge | 152 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-4 |
| Package Name | TO-247-4L |
| Power - Max | 375 W |
| Reverse Recovery Time (trr) | 134 ns |
| Switching Energy (Off) | 1.26 mJ |
| Switching Energy (On) | 1.25 mJ |
| Td (off) @ 25°C | 208 ns |
| Td (on) @ 25°C | 44 ns |
| Test Condition Current | 75 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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CAD
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