UF4006

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NTE Electronics, Inc

DIODE GEN PURP 800V 1A DO41

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NTE Electronics, Inc

DIODE GEN PURP 800V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	UF4006

Capacitance @ Vr, F	17 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Package / Case	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Mounting Type	Current - Average Rectified (Io)	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
NTE Electronics, Inc UF4005	17 pF	1.7 V	Axial DO-204AL DO-41	Standard	600 V	75 ns	Through Hole	1 A	200 mA 500 ns	DO-41	10 µA	150 °C	-65 C
NTE Electronics, Inc UF4004	17 pF	1 V	Axial DO-204AL DO-41	Standard	400 V	50 ns	Through Hole	1 A	200 mA 500 ns	DO-41	10 µA	150 °C	-65 C
NTE Electronics, Inc UF4006	17 pF	1.7 V	Axial DO-204AL DO-41	Standard	800 V	75 ns	Through Hole	1 A	200 mA 500 ns	DO-41	10 µA	150 °C	-65 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 1A Through Hole DO-41

Technical documentation and resources

No documents available