2SD1818-AZ

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Renesas Electronics Corporation

NPN SILICON POWER TRANSISTOR

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2SD1818-AZ

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Renesas Electronics Corporation

NPN SILICON POWER TRANSISTOR

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1818-AZ

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max	1.3 W
Supplier Device Package	TO-126
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

2SD1818 Series

Bipolar Power Transistors

Part	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Transistor Type	Power - Max	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type
Renesas Electronics Corporation 2SD1818-AZ	3 A	10 µA	150 °C	NPN	1.3 W	60 V	TO-126-3, TO-225AA	250 mV	TO-126	100 hFE	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

2SD1818 Series

A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.

Documents

Technical documentation and resources

No documents available