MIC4123YML

Active

Microchip Technology

DUAL 3A-PEAK LOW-SIDE MOSFET DRI

Search across all available documentation for this part.

Active

Microchip Technology

DUAL 3A-PEAK LOW-SIDE MOSFET DRI

Technical Specifications

Parameters and characteristics for this part

Specification	MIC4123YML

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	3 A
Current - Peak Output (Source, Sink) [custom]	3 A
Driven Configuration	Low-Side
Gate Type	N-Channel, P-Channel MOSFET
Input Type	Inverting
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	8-VQFN Exposed Pad
Rise / Fall Time (Typ) [custom]	11 ns
Rise / Fall Time (Typ) [custom]	11 ns
Supplier Device Package	8-QFN (4x4)
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	4.5 V

Part	Gate Type	Package / Case	Input Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Number of Drivers	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Channel Type	Supplier Device Package
Microchip Technology MIC4123YML	N-Channel P-Channel MOSFET	8-VQFN Exposed Pad	Inverting	3 A	3 A	Low-Side	-40 °C	125 ¯C	2	20 V	4.5 V	Surface Mount	11 ns	11 ns	Independent	8-QFN (4x4)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	417	$ 0.72

General part information

Low-Side Gate Driver IC Inverting 8-QFN (4x4)

Technical documentation and resources

No documents available