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BYV32EX-300PQ - TO-220F

BYV32EX-300PQ

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WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 300V 10A TO220F

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BYV32EX-300PQ - TO-220F

BYV32EX-300PQ

Active
WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 300V 10A TO220F

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBYV32EX-300PQ
Current - Average Rectified (Io) (per Diode)10 A
Current - Reverse Leakage @ Vr20 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 °C
Package / CaseTO-220-3 Full Pack, Isolated Tab
Reverse Recovery Time (trr)35 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-220F
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]300 V
Voltage - Forward (Vf) (Max) @ If1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.69
50$ 0.80
100$ 0.72
500$ 0.57
1000$ 0.52
2000$ 0.48
5000$ 0.43
10000$ 0.41

Description

General part information

BYV32 Series

Diode Array 1 Pair Common Cathode 300 V 10A Through Hole TO-220-3 Full Pack, Isolated Tab

Documents

Technical documentation and resources

No documents available