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ONSEMI MJD31T4G

MJD210T4G

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ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, PNP, 25 V, 5 A, 1.4 W, TO-252 (DPAK)

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ONSEMI MJD31T4G

MJD210T4G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, PNP, 25 V, 5 A, 1.4 W, TO-252 (DPAK)

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Description

General part information

MJD210T4G

High DC Current Gain

Lead Formed for Surface Mount Applications in Plastic Sleeves

Low Collector-Emitter Saturation Voltage

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD210T4G
Current - Collector (Ic) (Max)5 A
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)45
Frequency - Transition65 MHz
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameDPak
Power - Max1.4 W
Transistor TypePNP
Vce Saturation (Max)1.8 V
Voltage - Collector Emitter Breakdown (Max)25 V

Pricing

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CAD

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