B1S-G

Active

Comchip Technology

BRIDGE RECT 1P 100V 800MA MBS

Search across all available documentation for this part.

Active

Comchip Technology

BRIDGE RECT 1P 100V 800MA MBS

Technical Specifications

Parameters and characteristics for this part

Specification	B1S-G

Current - Average Rectified (Io)	800 mA
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-BESOP, TO-269AA
Supplier Device Package	MBS
Technology	Standard
Voltage - Peak Reverse (Max) [Max]	100 V

BRIDGE RECT 1P 100V 800MA MBS

Part	Supplier Device Package	Current - Average Rectified (Io)	Diode Type	Current - Reverse Leakage @ Vr	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Voltage - Peak Reverse (Max) [Max]	Mounting Type
Comchip Technology B1S-G	MBS	800 mA	Single Phase	5 µA	Standard	-55 °C	150 °C	4-BESOP, TO-269AA	100 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bridge Rectifier Single Phase Standard 100 V Surface Mount MBS

Technical documentation and resources

No documents available