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Description

General part information

2SB647CTZ-E

Bipolar (BJT) Transistor PNP 80 V 1 A 140MHz 900 mW Through Hole TO-92MOD

Technical Specifications

Parameters and characteristics for this part

Specification2SB647CTZ-E
Current - Collector (Ic) (Max)1 A
Current - Collector Cutoff (Max)10 µA
DC Current Gain (hFE) (Min)100
Frequency - Transition140 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-226-3, TO-92-3 Long Body (Formed Leads), Formed Leads, TO-92-3 Long Body
Package NameTO-92MOD
Power - Max900 mW
Transistor TypePNP
Vce Saturation (Max)1 V
Voltage - Collector Emitter Breakdown (Max)80 V

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