2SB1167T
ActiveON Semiconductor
POWER BIPOLAR TRANSISTOR, PNP
2SB1167T
ActiveON Semiconductor
POWER BIPOLAR TRANSISTOR, PNP
Description
General part information
2SB1167T
Bipolar (BJT) Transistor PNP 100 V 3 A 130MHz 1.2 W Through Hole TO-126LP
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SB1167T |
|---|---|
| Current - Collector (Ic) (Max) | 3 A |
| Current - Collector Cutoff (Max) | 1 µA |
| DC Current Gain (hFE) (Min) | 200 |
| Frequency - Transition | 130 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Package Name | TO-126LP |
| Power - Max | 1.2 VA |
| Transistor Type | PNP |
| Vce Saturation (Max) | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
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