BYC15-600PQ

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 15A TO220AC

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 15A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	BYC15-600PQ

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	18 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	3.2 V

Part	Reverse Recovery Time (trr)	Mounting Type	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction	Supplier Device Package	Technology	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]
WeEn Semiconductors Co., Ltd BYC15-600,127	55 ns	Through Hole	TO-220-2	200 mA 500 ns	2.9 V	500 V	150 °C	TO-220AC	Standard	200 µA	15 A
WeEn Semiconductors Co., Ltd BYC15-600PQ	18 ns	Through Hole	TO-220-2	200 mA 500 ns	3.2 V	600 V		TO-220AC	Standard	10 µA	15 A	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 15A Through Hole TO-220AC

Technical documentation and resources

No documents available