UF4001 TR

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 50V 1A DO41

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Obsolete

Central Semiconductor Corp

DIODE GEN PURP 50V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	UF4001 TR

Capacitance @ Vr, F	20 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1 V

DIODE GEN PURP 50V 1A DO41

Part	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Package / Case	Technology	Current - Reverse Leakage @ Vr	Speed	Mounting Type	Supplier Device Package	Reverse Recovery Time (trr)
Central Semiconductor Corp UF4001 TR	20 pF	150 °C	-65 C	50 V	1 A	1 V	Axial, DO-204AL, DO-41	Standard	10 µA	200 mA, 500 ns	Through Hole	DO-41	50 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 50 V 1A Through Hole DO-41

Technical documentation and resources